high voltage transistors maximum ratings rating symbol v alue unit collector?emitter voltage v ceo 140 vdc collector?base voltage v cbo 160 vdc emitter?base voltage v ebo 6.0 vdc collector current ? continuous i c 600 madc thermal characteristics characteristic symbol ma x unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j ,t stg ?55 to +150 c electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage(3) v (br)ceo vdc (i c = 1.0 madc, i b = 0) 140 ? collector?base breakdown voltage v (br)cbo vdc (i c = 100 adc, i e = 0) 180 ? emitter?base breakdown voltage v (br)ebo vdc (i e = 10 adc, i c = 0) 6.0 ? collector cutoff current i cbo nadc ( v cb = 120vdc, i e = 0) ? 50 adc ( v cb = 120vdc, i e = 0, t a =100 c) ? 50 emitter cutoff current i ebo ? 50 nadc ( v be = 4.0vdc, i c = 0) 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina . 3. pulse test: pulse width = 300 s, duty cycle = 2.0%. feature ? we declare that the material of product compliance with rohs requirements. zowie technology corporation 1 2 3 sot-23 MMBT5550GH mmbt5551gh zowie technology corporation rev. 0 2 emitter 3 collector 1 base MMBT5550GH 160 ? mmbt5551 gh 1 60 ? MMBT5550GH mmbt5551 gh ( v cb = 1 00 vdc, i e = 0) ? 100 MMBT5550GH mmbt5551 gh ? 100 MMBT5550GH ( v cb = 100vdc, i e = 0, t a =100 c) mmbt5551 gh lead free product halogen-free type
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe ?? (i c = 1.0 madc, v ce = 5.0 vdc) 80 ? (i c = 10 madc, v ce = 5.0 vdc) 20 250 (i c = 50 madc, v ce = 5.0vdc) 30 ? collector?emitter saturation voltage v ce(sat) vdc (i c = 10 madc, i b = 1.0 madc) both types ? 0.15 (i c = 50 madc, i b = 5.0 madc ) ? 0.20 base?emitter saturation voltage v be(sat) vdc (i c = 10 madc, i b = 1.0 madc) both types ? 1.0 (i c = 50 madc, i b = 5.0 madc) ? 1.0 zowie technology corporation rev. 0 zowie technology corporation MMBT5550GH mmbt5551gh MMBT5550GH mmbt5551gh 60 ? 80 ? 60 MMBT5550GH mmbt5551gh 250 MMBT5550GH mmbt5551gh ? 0.2 5 MMBT5550GH mmbt5551gh ? 1. 2
v ce = 1.0 v v ce = 5.0 v i c , collector current (ma) figure 15. dc current gain h fe , dc current gain (normalized) t j = +125c +25c ?55c 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 500 300 200 100 50 30 20 10 7.0 5.0 i b , base current (ma) figure 16. collector saturation region v be , base?emitter voltage (volts) figure 3. collector cut?off region i c , collector current (ma) figure 4. ?on? voltages v ce , collector emitter voltage (volts) i c , collector current ( a) v, voltage (volts) ?0.4 ?0.3 ?0.2 ?0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 10 1 10 0 10 ?1 10 ?2 10 ?3 10 ?4 10 ?5 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1.0 0.8 0.6 0.4 0.2 0 i c = 1.0 ma t j = 25c 10 ma 30 ma 100 ma 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 1.0 0.8 0.6 0.4 0.2 0 v ce = 30 v t j = 125c 75c 25c i c = i ces reverse forward t j = 25c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 zowie technology corporation zowie technology corporation rev. 0 MMBT5550GH mmbt5551gh
c obo c, capacitance (pf) 10.2 v v in 10 ms input pulse v bb r b 5.1 k 0.25 mf v in 1n914 v out r c v cc 30 v 3.0 k t r , t f < 10 ns duty cycle = 1.0% t, time (ns) values shown are for i c @ 10 ma figure 6. switching time test circuit i c , collector current (ma) figure 5. temperature coefficients v r , reverse voltage (volts) figure 7. capacitances figure i c , collector current (ma) 8. turn?on time i c , collector current (ma) figure 9. turn?off time t, time (ns) v , temperature coefficient (mv/c) t j = 25c i c /i b = 10 t j = 25c t r @ v cc = 120 v t r @ v cc = 30 v t d @ v eb(off) = 1.0 v v cc = 120 v i c /i b = 10 t j = 25c t f @ v cc = 120 v t f @ v cc = 30 v t s @ v cc = 120 v vc for v ce(sat) vb for v be(sat) t j = ?55c to +135c 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 2.5 2 1.5 1.0 0.5 0 ?0.5 ?1.0 ?1.5 ?2.0 ?2.5 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 c ibo 0.2 0.3 0.7 0.5 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 1000 500 300 200 100 50 30 20 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 5000 3000 2000 1000 500 300 200 100 50 100 ?8.8 v 100 zowie technology corporation rev. 0 zowie technology corporation MMBT5550GH mmbt5551gh
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